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| 2SJ247 Silicon P-Channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ247 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -100 20 -8 -32 -8 40 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS -100 20 -- -- -1.0 -- -- |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.25 0.3 5.5 880 325 80 12 47 150 75 -1.0 170 Max -- -- 10 -250 -2.0 0.3 0.45 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -8 A, VGS = 0 I F = -8 A, VGS = 0, diF/dt = 50 A/s I D = -4 A, VGS = -10 V, RL = 7.5 Test conditions I D = -10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -80 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -4 A, VGS = -10 V*1 I D = -4 A, VGS = -4 V*1 I D = -4 A, VDS = -10 V*1 VDS = -10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time VGS(off) RDS(on) 2 2SJ247 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) Maximum Safe Operation Area -50 -30 -10 Drain Current I D (A) 40 -3 -1 PW 10 s 10 0 s = 1 10 m s m n tio ra ) pe C O 25 C D c= (T s (1 Sh ot ) 20 -0.3 -0.1 Operation in this area is limited by R DS (on) Ta = 25C 0 50 100 150 -0.05 -1 -3 -10 -30 -100 -300 -1000 Case Temperature Tc (C) Drain to Source Voltage VDS (V) -20 -16 Drain Current I D (A) Typical Output Characteristics -10 V -6 V Pulse Test -4.5 V Drain Current I D (A) Typical Transfer Characteristics -10 -8 -6 -4 -2 Pulse Test VDS = -10 V -25C Tc = 75C 25C -12 -8 -4 -4 V -3.5 V -3 V -2.5 V 0 -4 -8 -12 -16 -20 0 -2 -4 -6 -8 -10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 3 2SJ247 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage -5 Static Drain to Source on State Resistance RDS (on) ( ) -4 -3 -2 -5 A -1 -2 A Pulse Test ID = -10 A 5 Pulse Test 2 1 0.5 0.2 0.1 0.05 -0.5 -1 VGS = -4 V -10 V Static Drain to Source on State Resistance vs. Drain Current 0 -2 -4 -6 -8 -10 Gate to Source Voltage VGS (V) -2 -5 -10 -20 -50 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 0.6 0.4 0.2 VGS = -10 V Forward Transfer Admittance vs. Drain Current 50 Forward Transfer Admittance |y fs | (s) Static Drain to Source on State Resestance RDS (on) ( ) Pulse Test -10 A -5 A 20 10 5 2 1 Pulse Test VDS = -10 V Tc = -25C 25C -4 V -2 A -2,-5 A -10 A 75C 0 -40 0 40 80 120 160 0.5 -0.1 -0.2 Case Temperature Tc (C) -0.5 -1 -2 -5 Drain Current I D (A) -10 4 2SJ247 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 C (pF) 100 50 20 10 0.5 -0.2 di/dt = 50 A/ s VGS = 0 10000 3000 1000 300 100 Crss 30 10 0 -10 -20 -30 Drain to Source Voltage -40 -50 VDS (V) VGS = 0, f = 1 MHz Ciss Typical Capacitance vs. Drain-Source Voltage Capacitance Coss -0.5 -1 -2 -5 -10 -20 Reverse Drain Current I DR (A) Dynamic Input Characteristics 0 Drain to Source Voltage VDS (V) -20 -40 -60 -80 I D = -8 A VGS -16 -20 50 Gate to Source Voltage VGS (V) VDD = -10 V -25 V -50 V -50 V -25 V VDD = -10 V 0 -4 -8 -12 Switching Characteristics 500 200 100 50 20 10 5 -0.1 -0.2 t d (off) VGS = -10 V, VDD = -30 V :. Pw = 2 s, duty 1% VDS Switching Time t (ns) tf tr t d (on) -0.5 -1 -2 -5 Drain Current I D (A) -10 -100 0 10 20 30 40 Gate Charge Qg (nc) 5 2SJ247 Reverse Drain Current vs. Source to Drain Voltage -20 I DR (A) Pulse Test -16 -12 -8 -10 V -5 V -4 0 0 VGS = 0 V, 5 V Reverse Drain Current -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 ch-c (t) = S (t) * ch-c ch-c = 3.13C/W, TC = 25C PDM PW 1 D = PW T 0.02 0.03 0.01 10 1S 1 lse 0.0 t Pu o h T 1m 10 m Pulse Width PW (s) 100 m 100 10 Waveforms Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Vin -10 V VDD . = -30 V . Vout td (on) 90% 10% tr td (off) Vin 10% 90% 90% 10% tf 6 Unit: mm 11.5 MAX 2.79 0.2 10.16 0.2 9.5 8.0 3.6 -0.08 +0.1 4.44 0.2 1.26 0.15 6.4 +0.2 -0.1 18.5 0.5 15.0 0.3 1.27 2.7 MAX 14.0 0.5 1.5 MAX 7.8 0.5 0.76 0.1 2.54 0.5 2.54 0.5 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-220AB Conforms Conforms 1.8 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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